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National Stock Number:
5961-00-006-6964
Federal Supply Class:
5961
National Item Identification Number:
000066964
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 57651000-02 | 01295 | TEXAS INSTRUMENTS INCORPORATED | | 57651000-02 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 57651000-02 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 57651000-02 | 27963 | GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS | | 57651000-02 | 3B150 | RAYTHEON COMPANY | | 57651000-02 | 3CYA2 | GENERAL DYNAMICS MISSION SYSTEMS, INC. | | 57651000-02 | 49956 | RAYTHEON COMPANY | | 57651000-02 | 54X10 | RAYTHEON COMPANY | | SD1309F2 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INCLOSURE MATERIAL | METAL | | OVERALL HEIGHT | 0.080 INCHES MAXIMUM | | OVERALL LENGTH | 0.260 INCHES MAXIMUM | | OVERALL WIDTH | 0.150 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN | | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR | | TERMINAL LENGTH | 0.150 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD | | TRANSFER RATIO | 90.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
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