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National Stock Number: 5961-00-009-8025
Federal Supply Class: 5961
National Item Identification Number: 000098025
Description: TRANSISTOR
Detail: An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
070000630 | S0555 | TOKYO KEIKI SEIZOSHO CO. TOKYO PRECISION INSTRUMENT CO. LTD | 2SA499R | S0482 | SONY CORPORATION | 472-0434-001 | 94756 | THE BOEING COMPANY | 504A | 07263 | FAIRCHILD SEMICONDUCTOR CORP | JAN2N3250 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | JAN2N3250A | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | JANTX2N3250 | 81350 | JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | JANTX2N3250A | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | JANTX2N3250AA | C7191 | ADELCO ELEKTRONIK GMBH | MIL-PRF-19500/323 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | MILS19500-323 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M |
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Techincal Specification:
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC | FEATURES PROVIDED | HERMETICALLY SEALED CASE | INCLOSURE MATERIAL | METAL | INTERNAL CONFIGURATION | JUNCTION CONTACT | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 | OVERALL DIAMETER | 0.195 INCHES MAXIMUM | OVERALL LENGTH | 0.210 INCHES MAXIMUM | MOUNTING METHOD | TERMINAL | POWER RATING PER CHARACTERISTIC | 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION | SEMICONDUCTOR MATERIAL | SILICON | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/323 GOVERNMENT SPECIFICATION | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | TERMINAL LENGTH | 0.750 INCHES MAXIMUM | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
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