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National Stock Number:
5961-00-025-5956
Federal Supply Class:
5961
National Item Identification Number:
000255956
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 2N4854 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | JAN2N4854 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | JAN2N4854 | C7191 | ADELCO ELEKTRONIK GMBH | | JAN2N4854 | D6528 | LACON ELECTRONIC GMBH | | JAN2N4854A | C7191 | ADELCO ELEKTRONIK GMBH | | MIL-PRF-19500/421 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INCLOSURE MATERIAL | METAL | | OVERALL DIAMETER | 0.370 INCHES MAXIMUM | | OVERALL HEIGHT | 0.260 INCHES MAXIMUM | | OVERALL LENGTH | 0.260 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | SPECIAL FEATURES | INTERNAL JUNCTION CONFIGURATION FIRST TRANSISTOR NIPIN AND SECOND TRANSISTOR NPN | | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/421 GOVERNMENT SPECIFICATION | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR | | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD | | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
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