COMPONENT NAME AND QUANTITY | 12 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS SINGLE SEMICONDUCTOR DEVICE DIODE |
FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND GOLD PLATED LEADS AND HERMETICALLY SEALED CASE |
FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
OVERALL HEIGHT | 0.230 INCHES MINIMUM |
OVERALL LENGTH | 0.770 INCHES MINIMUM AND 0.830 INCHES MAXIMUM |
OVERALL WIDTH | 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
MATERIAL | CERAMIC ENCLOSURE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION |
MOUNTING METHOD | TERMINAL |
POWER RATING PER CHARACTERISTIC | 1.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION SINGLE SEMICONDUCTOR DEVICE DIODE |
PRECIOUS MATERIAL | GOLD |
PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |
SEMICONDUCTOR MATERIAL | SILICON SINGLE SEMICONDUCTOR DEVICE DIODE |
SPECIAL FEATURES | SINGLE SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
TERMINAL LENGTH | 0.125 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 12 PIN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 14.5 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS SINGLE SEMICONDUCTOR DEVICE DIODE |