5961-01-362-9720, SEMICONDUCTOR DEVICES,UNITIZED

5961-01-362-9719 SEMICONDUCTOR DEVICE,DIODE

National Stock Number:
5961-01-362-9720

Federal Supply Class:
5961

National Item Identification Number:
013629720

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

G309036-1	3B150	RAYTHEON COMPANY
G309036-1	49956	RAYTHEON COMPANY
G494565-453	3B150	RAYTHEON COMPANY
G494565-453	49956	RAYTHEON COMPANY
G494565-453	54X10	RAYTHEON COMPANY

Techincal Specification:

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE	CATHODE
COMPONENT NAME AND QUANTITY	2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC	30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED	HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED	RECTIFIER
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-3
OVERALL HEIGHT	0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH	1.573 INCHES MAXIMUM
OVERALL WIDTH	1.050 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE
SPECIAL FEATURES	ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
SEMICONDUCTOR MATERIAL	SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL TEST FEATURES	SELECTED AND TESTED FOR THE MILSTAR LRIP PROGRAM
TERMINAL TYPE AND QUANTITY	2 PIN AND 1 CASE
TEST DATA DOCUMENT	49956-G309036 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE

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