COMPONENT NAME AND QUANTITY | 1 SEMICONDUCTOR DEVICE DIODE AND 1 TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 4.50 AMPERES NOMINAL DRAIN CURRENT SINGLE TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 4.50 AMPERES NOMINAL FORWARD CURRENT, DC SINGLE SEMICONDUCTOR DEVICE DIODE |
FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
OVERALL HEIGHT | 0.275 INCHES MAXIMUM |
OVERALL LENGTH | 0.820 INCHES NOMINAL |
OVERALL WIDTH | 0.690 INCHES NOMINAL |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 80.0 CELSIUS AMBIENT AIR |
MOUNTING FACILITY QUANTITY | 1 |
MOUNTING METHOD | UNTHREADED HOLE |
SEMICONDUCTOR MATERIAL | SILICON SINGLE SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON SINGLE TRANSISTOR |
SPECIAL FEATURES | SINGLE SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
TERMINAL TYPE AND QUANTITY | 5 UNINSULATED WIRE LEAD |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.5 NOMINAL FORWARD VOLTAGE, DC SINGLE SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE SINGLE TRANSISTOR |