| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| III SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| INCLOSURE MATERIAL | METAL |
| POWER RATING PER CHARACTERISTIC | 430.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MOUNTING METHOD | TERMINAL |
| OVERALL HEIGHT | 0.057 INCHES NOMINAL |
| OVERALL LENGTH | 0.100 INCHES NOMINAL |
| OVERALL WIDTH | 0.100 INCHES NOMINAL |
| SPECIAL FEATURES | HAS 2 SOURCE CONNECTIONS |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |