5961-01-367-2825, SEMICONDUCTOR DEVICES,UNITIZED

5961-01-367-2826 SEMICONDUCTOR DEVICE,DIODE

National Stock Number:
5961-01-367-2825

Federal Supply Class:
5961

National Item Identification Number:
013672825

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

2N3811	04713	FREESCALE SEMICONDUCTOR, INC.
2N3811	43611	MICROSEMI CORP - MASSACHUSETTS
A3255926	80063	US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
A3255926-1	80063	US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
MIL-PRF-19500/336	81349	MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
2N3811	81349	MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
MIL-S-19500/336	81349	MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Techincal Specification:

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE	COLLECTOR
COMPONENT NAME AND QUANTITY	2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
OVERALL DIAMETER	0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH	0.650 INCHES MINIMUM AND 0.935 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINAL
SPECIAL FEATURES	ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
PART NAME ASSIGNED BY CONTROLLING AGENCY	TRANSISTOR - PNP, DUAL AMPLIFIER
POWER RATING PER CHARACTERISTIC	0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER	0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH	0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY	6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR

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