|
|
|
National Stock Number:
5961-01-372-8127
Federal Supply Class:
5961
National Item Identification Number:
013728127
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
|
Manufacturer Information:
| 77A112799P001 | 03538 | LOCKHEED MARTIN CORPORATION | | 77A112799P1 | 03538 | LOCKHEED MARTIN CORPORATION |
|
Techincal Specification:
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR | | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE | | OVERALL LENGTH | 0.375 INCHES NOMINAL | | OVERALL WIDTH | 0.340 INCHES NOMINAL | | MATERIAL | PLASTIC ENCLOSURE | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 2ND TRANSISTOR | | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 3RD TRANSISTOR | | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 1ST TRANSISTOR | | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 4TH TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | TERMINAL TYPE AND QUANTITY | 9 PIN | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -4.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN 3RD TRANSISTOR | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -4.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN 2ND TRANSISTOR | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN 1ST TRANSISTOR | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN 4TH TRANSISTOR |
|
|