| CUBIC MEASURE | 5.65 CUBIC METERS |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 MICROAMPERES NOMINAL COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 1.00 MICROAMPERES NOMINAL EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN |
| FEATURES PROVIDED | BURN IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | SOT-23 |
| OVERALL HEIGHT | 1.3 MILLIMETERS NOMINAL |
| OVERALL LENGTH | 2.9 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 1.5 MILLIMETERS NOMINAL |
| MATERIAL | PLASTIC ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION |
| MOUNTING METHOD | TERMINAL |
| POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| TRANSFER RATIO | 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |