COMPONENT NAME AND QUANTITY | 8 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL TRANSISTOR |
INCLOSURE MATERIAL | CERAMIC |
OVERALL HEIGHT | 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
OVERALL LENGTH | 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
OVERALL WIDTH | 0.745 INCHES MINIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR |
MOUNTING METHOD | TERMINAL |
POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/474 GOVERNMENT SPECIFICATION |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL TRANSISTOR |
TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |