| BODY HEIGHT | 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| BODY LENGTH | 0.390 INCHES MAXIMUM |
| BODY WIDTH | 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | F-2 MIL-M-38510 |
| CURRENT RATING PER CHARACTERISTIC | 0.90 MILLIAMPERES MAXIMUM SUPPLY |
| DESIGN FUNCTION AND QUANTITY | 1 GATE, NAND |
| FEATURES PROVIDED | BIPOLAR AND LOW POWER AND SCHOTTKY AND MONOLITHIC |
| INCLOSURE CONFIGURATION | FLAT PACK |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 8 INPUT |
| MAXIMUM POWER DISSIPATION RATING | 4.95 MILLIWATTS |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | SINGLE,8-INPUT POSITIVE NAND GATE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 14 FLAT LEADS |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |