| CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| FEATURES PROVIDED | PROGRAMMED |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| MAXIMUM POWER DISSIPATION RATING | 633.0 MILLIWATTS |
| MEMORY DEVICE TYPE | PROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL-PROGRAMMABLE READ ONLY MEMORY (PROM) |
| SPECIFICATION/STANDARD DATA | 96906-MIL-STD-883 GOVERNMENT STANDARD |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 76301-75B049008-1003 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS NOMINAL ACCESS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |