| CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| DEPARTURE FROM CITED DOCUMENT | ALTERED BY PROGRAMMING,MARKING & TESTING |
| FEATURES PROVIDED | PROGRAMMED |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | PROM |
| NONDEFINITIVE SPEC/STD DATA | 201 NUMBER |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL,SCHOTTKY,BIPOLAR 8,192 BIT (1K X 8) PROGRAMMABLE READ-ONLY MEMORY (PROM),MONOLITHIC SILICON |
| SPECIFICATION/STANDARD DATA | 56232-1219252 MANUFACTURERS SPECIFICATION CONTROL |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY AND 4.5 VOLTS MINIMUM POSITIVE POWER SUPPLY SPAN AND 5.5 VOLTS MAXIMUM POSITIVE POWER SUPPLY SPAN |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). AND 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS NOMINAL ACCESS |