| CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL, MONOLITHIC 256K (32K X 8-BIT) CMOS, STATIC RANDOM ACCESS MEMORY (SRAM) |
| SPECIAL FEATURES | ESD |
| STORAGE TEMP RANGE | -65.0 TO 125.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PIN |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |