BODY HEIGHT | 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
BODY LENGTH | 1.260 INCHES MINIMUM AND 1.280 INCHES MAXIMUM |
BODY WIDTH | 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
CRITICALITY CODE JUSTIFICATION | FEAT |
FEATURES PROVIDED | BURN IN AND COMPATIBLE CMOS AND ERASABLE AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND HERMETICALLY SEALED AND W/CLOCK |
INCLOSURE CONFIGURATION | DUAL-IN-LINE |
INCLOSURE MATERIAL | CERAMIC |
INPUT CIRCUIT PATTERN | 22 INPUT |
MEMORY DEVICE TYPE | PAL |
OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,PROGRAMMED |
SPECIAL FEATURES | ELECTROSTATIC DISCHARGE SENSITIVE; ALTERED ITEM,MADE FROM 5962-8686401LA,PROGRAMMED PER 1058-U1.JED,FD137200065-001,CHECKSUM 006C; NHA PN 1372AE1058 |
STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
TERMINAL SURFACE TREATMENT | SOLDER |
TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |