| CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT |
| FEATURES PROVIDED | BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND PROGRAMMED AND HIGH RELIABILITY |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | 1024-BIT BIPOLAR(256X4) ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
| MEMORY DEVICE TYPE | EEPROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| PURCHASE DESCRIPTION IDENTIFICATION | 49956-979738-114 |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |