| FEATURES PROVIDED | LOW POWER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MEMORY, DIGITAL CMOS 128K X 8 SRAM LOW POWER |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 96096-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS NOMINAL ACCESS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |