| BIT QUANTITY | 1048576 |
| BODY HEIGHT | 0.172 INCHES MAXIMUM |
| BODY LENGTH | 1.700 INCHES MAXIMUM |
| BODY WIDTH | 0.350 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
| FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER AND BURN IN, MIL-STD-883, CLASS B |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | SILICON |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER |
| SPECIAL FEATURES | CIRCUIT FUNCTION-DUAL CE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| WORD QUANTITY | 131072 |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 32 PIN |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS NOMINAL ACCESS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |