| DESIGN FUNCTION AND QUANTITY | 8 MEMORY, ELECTRICALLY ERASABLE PROGRAMMABLE ROM |
| FEATURES PROVIDED | BURN IN AND ERASABLE AND PROGRAMMABLE AND MONOLITHIC |
| INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC AND COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,CMOS 128K X 8 BIT EEPROM,MONOLITHIC SILICON |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| SPECIAL FEATURES | REFER TO SMD 5962-38267 |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 32 CASE |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT |